rf01097 , rev . a ( 2/21/13 ) ?201 3 microsemi corporation page 1 of 5 1pmt4614e3 C 1pmt4627e3 , 1pmt4099e3 C 1pmt4135e3 compliant p owermite low noise 1 watt zener diodes description this microsemi powermite surface mount low noise zener package series provides a high er power handling capabili ty that are also rohs compliant. in addition to its size advantages, powermite package features include a full - metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an efficien t heat pa th from die to mounting plane for external heat sinking with very low thermal resis tance junction to case (bottom). its innovative design makes this device ideal for use with automatic insertion equipment. do - 216 package also available in : do - 35 pac kage (axial - leaded) 1n4099 C 1n4135 and 1n4614 C 1n4627 do - 213aa package (surface mount) 1n4099 ur C 1n4135 ur and 1n4614 ur C 1n4627 ur important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent to jedec registered 1n4 099 through 1n4135 and 1n46 14 th rough 1n4627 series except with additional power capability . ? extensive selection from 1.8 to 100 volts . ? regulates voltage over a broad operating current and temperature range . ? low r ? jc for cooler operation and better voltage regulation . ? low noise density (1 - 3 khz) at test current . ? low reverse leakage current . ? rohs compliant by design . applications / benefits ? tight tolerances available in plus or minus 2% . ? moisture classification level 1 per ipc/jedec j - std - 020b with no dry pack required . ? non - sensitive to esd per mil - s td - 750 m ethod 1020 . ? compatible with automatic insertion equipment . ? full metallic bottom eliminates flux entrapment . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, irela nd tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage tem p erature t j and t stg - 55 to +150 o c thermal resistance junction - to - ambient (1) r ? ja 240 o c /w thermal resistance junction - to - case r ? jc 30 o c /w steady - state power dissipation (2) p d 1.0 w for w ard voltage @ 200 ma v f 1.1 v solder temperature @ 10 s t sp 260 o c notes : 1. o n fr4 pc board (1 oz copper) with recommended footprint (see last page ). 2. a t t c < 120 o c where t c is case bottom temperature at mounting plane, or 0.5 watts at t a = 30 o c (ambient temperature) when mounted on fr4 pc board as described for r ? ja (also see power deratings in f igure 2 ). downloaded from: http:///
rf01097 , rev . a ( 2/21/13 ) ?201 3 microsemi corporation page 2 of 5 1pmt4614e3 C 1pmt4627e3 , 1pmt4099e3 C 1pmt4135e3 mechanical and packaging ? case: void - free transfer molded thermosetting epoxy compound meeting ul94v - 0. ? finish: annealed matte -t in plating over copper and readily solderable per mil - s td - 750 method 2026 . (c onsult factory for t in - l ead plating . note: tin - lead plated product is not rohs compliant. ) ? polarity: cathode designated by tab 1 (bottom). ? tape and reel option: standard per eia - 481 -b (consult factory for quantities). ? marking: three numerical digits of p/n and a dot (see e lectrical c haracteristics ). ? w eight: approximately 0.016 grams . ? see p ackage d imensions on last page. part nomenclature 1 pmt 4 099 c e3 1 watt powermit e class jedec type number ( see electrical characteristic s t able ) rohs compliance zener voltage tolerance b lank = 5% c = 2% symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified volt age and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). i zm maximum regulator (zener) current: the maximum rated dc current for the specified power rati ng. n d noise density: the noise generated over a specified frequency bandwidth usually spec ified in terms of mv/ hz. v r reverse voltage: the reverse voltage dc value, no alternating component. v z zener voltage: the z ener voltage the device will exhibit at a specified current (i z ) in its breakdown region. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. downloaded from: http:///
rf01097 , rev . a ( 2/21/13 ) ?201 3 microsemi corporation page 3 of 5 1pmt4614e3 C 1pmt4627e3 , 1pmt4099e3 C 1pmt4135e3 electrical characteristics @ 25 c unless otherwise stated part number (note 4) device marking nominal zener voltage (note 1) v z @ i zt zener test current i zt maximum zener impedance (note 2) z zt maximum reverse current i r @ v r maximum noise density n d @ i zt maximum zener current (note 3) i zm maximum temperature coefficient of zener voltage vz v olts a ohms a v olts v/ hz ma %/ c 1pmt4614 614 ? 1.8 250 1200 10 1.0 1 262.4 - 0.075 1pmt4615 615 ? 2.0 250 1250 5.0 1.0 1 240.6 - 0.075 1pmt4616 616 ? 2.2 250 1300 4.0 1.0 1 218.7 - 0.075 1pmt4617 617 ? 2.4 250 1400 2.0 1.0 1 207.8 - 0.075 1pmt4618 618 ? 2.7 250 1500 1.0 1.0 1 196.8 - 0.075 1pmt4619 619 ? 3.0 250 1600 0.8 1.0 1 190.3 - 0.075 1pmt4620 620 ? 3.3 250 1650 7.5 1.5 1 1 85.9 - 0.075 1pmt4621 621 ? 3.6 250 1700 7.5 2 .0 1 181.5 - 0.065 1pmt4622 622 ? 3.9 250 1650 5.0 2 .0 1 174.9 - 0.060 1pmt4623 623 ? 4.3 250 1650 4.0 2 .0 1 168.4 - 0.050 1pmt4624 624 ? 4.7 250 1600 10 3 .0 1 164.0 - 0.040 +0.020 1pmt4625 625 ? 5.1 250 1500 10 3 .0 2 153.1 - 0.045 +0.030 1pmt4626 626 ? 5.6 250 1400 10 4 .0 4 142.2 - 0.020 +0.040 1pmt4627 627 ? 6.2 250 1200 10 5 .0 5 133.4 - 0.010 +0.050 1pmt4099 099 ? 6.8 250 200 10 5.17 40 122.5 0.040 1pmt4100 100 ? 7.5 250 200 10 5.70 40 111.5 0.045 1pmt4101 101 ? 8.2 250 200 1 6.24 40 100.6 0.048 1pmt4102 102 ? 8.7 250 200 1 6.61 40 96.2 0.049 1pmt4103 103 ? 9.1 250 200 1 6.92 40 91.9 0.050 1pmt4104 104 ? 10 250 200 1 7.60 40 83.1 0.055 1pmt4105 105 ? 11 250 200 .05 8.44 40 76.5 0.060 1pmt4106 106 ? 12 250 200 .05 9.12 40 69.9 0.065 1pmt4107 107 ? 13 250 200 .05 9.87 40 63.4 0.065 1pmt4108 108 ? 14 250 200 .05 10.65 40 59.0 0.070 1pmt4109 109 ? 15 250 100 .05 11.40 40 54.8 0.070 1pmt4110 110 ? 16 250 100 .05 12.15 40 52.5 0.070 1pmt4111 111 ? 17 250 100 .05 12.92 40 48. 1 0.075 1pmt4112 112 ? 18 250 100 .05 13.37 40 45.9 0.075 1pmt4113 113 ? 19 250 150 .05 14.44 40 43.7 0.075 1pmt4114 114 ? 20 250 150 .01 15.20 40 41.6 0.075 1pmt4115 115 ? 22 250 150 .01 16.72 40 37.2 0.080 1pmt4116 116 ? 24 250 150 .01 18.25 40 34.9 0.08 0 1pmt4117 117 ? 25 250 150 .01 19.00 40 32.8 0.080 1pmt4118 118 ? 27 250 150 .01 20.45 40 30.6 0.085 1pmt4119 119 ? 28 250 200 .01 21.28 40 30.6 0.085 1pmt4120 120 ? 30 250 200 .01 22.80 40 28.4 0.085 1pmt4121 121 ? 33 250 200 .01 25.08 40 26.2 0.085 1pm t4122 122 ? 36 250 200 .01 27.38 40 24.0 0.090 1pmt4123 123 ? 39 250 200 .01 29.65 40 21.4 0.090 1pmt4124 124 ? 43 250 250 .01 32.65 40 19.5 0.090 1pmt4125 125 ? 47 250 250 .01 35.75 40 17.7 0.090 1pmt4126 126 ? 51 250 300 .01 38.76 40 16.4 0.090 1pmt4127 127 ? 56 250 300 .01 42.60 40 14.7 0.090 1pmt4128 128 ? 60 250 400 .01 45.60 40 13.9 0.090 1pmt4129 129 ? 62 250 500 .01 47.10 40 13.3 0.090 1pmt4130 130 ? 68 250 700 .01 51.68 40 12.2 0.095 1pmt4131 131 ? 75 250 700 .01 57.00 40 11.2 0.095 1pmt4132 132 ? 82 250 800 .01 62.32 40 10.1 0.095 1pmt4133 133 ? 87 250 1000 .01 66.12 40 9.6 0.095 1pmt4134 134 ? 91 250 1200 .01 69.16 40 9.2 0.095 1pmt4135 135 ? 100 250 1500 .01 76.00 40 8.3 0.095 note 1: product shown has a standard tolerance of 5% on the nomina l z ener voltage. v z is measured at i zt with tc (tab 1) at 30 c. note 2: zener impedance is derived by superimposing on i zt a 60 hz rms ac current equal to 10% of i zt (25 a ac). note 3: based on 1 w maximum power dissipation before any derating. all owance has been made for higher voltage with operation at higher currents and temperature. for determination of voltage change with curre nt deviations from i zt see micronote 202 . downloaded from: http:///
rf01097 , rev . a ( 2/21/13 ) ?201 3 microsemi corporation page 4 of 5 1pmt4614e3 C 1pmt4627e3 , 1pmt4099e3 C 1pmt4135e3 graphs figure 1 C noise density measurement circuit noise density, (n d ) is specified in microvolt - rms per squa re - root - hertz. actual measurement is performed using a 1 k hz to 3 k hz frequency bandpass filter at a constant zener test current (i zt ) at 25 o c ambient temperature. n d is calculated from the formula. zener voltage v z figure 3 C capacitance vs. zener voltage (typical) temperature ( o c) figure 2 - power derating curve where t c is case (bottom) temperature and t a is ambient temperature on fr4 pc boar d. p d rated power dissipation (mw) typical capacitance in picofarads (p f) downloaded from: http:///
rf01097 , rev . a ( 2/21/13 ) ?201 3 microsemi corporation page 5 of 5 1pmt4614e3 C 1pmt4627e3 , 1pmt4099e3 C 1pmt4135e3 package dimensions pad layout dimens ions ltr inch millimeters min max min max a 0.029 0.039 0.73 0.99 b 0.016 0.026 0.40 0.66 c 0.070 0.080 1.77 2.03 d 0.087 0.097 2.21 2.46 e 0.020 0.030 0.50 0.76 f 0.051 0.061 1.29 1.54 g 0.021 0.031 0.53 0.78 h 0.004 0.008 0.10 0.20 j 0.070 0 .080 1.77 2.03 k 0.035 0.045 0.89 1.14 dimensions ltr inch millimeters a 0.100 2.54 b 0.105 2.67 c 0.050 1.27 d 0.030 0.76 e 0.025 0.64 downloaded from: http:///
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